For a long-channel MOSFET in saturation, the small-signal transconductance gm indicates how strongly drain current changes with?

  • AGate-source voltage at the bias point
  • BDrain resistance only
  • CBody temperature only
  • DGate current
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Correct Answer: A. Gate-source voltage at the bias point
Explanation: MOSFET transconductance is the incremental derivative gm=∂ID/∂VGS at the operating point.
Reference: Standard electronics: MOSFET transconductance