Avalanche breakdown in a PN junction is mainly associated with?

  • AImpact ionization and carrier multiplication
  • BForward-bias recombination only
  • CMechanical contact bounce
  • DZero electric field
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Correct Answer: A. Impact ionization and carrier multiplication
Explanation: In avalanche breakdown, carriers accelerated by a strong electric field create additional electron-hole pairs through impact ionization.
Reference: Standard semiconductor electronics: avalanche breakdown