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Electronic Devices & Circuits FET & MOSFET

In the ideal square-law saturation model of an enhancement nMOSFET, drain current is primarily proportional to?

AVGS only
B(VGS - VTH)^2
C1/VGS
DVDS^2 regardless of VGS

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Correct Answer: B. (VGS - VTH)^2

Explanation: In the long-channel ideal saturation model, ID is proportional to the square of the overdrive voltage VGS - VTH, neglecting channel-length modulation.

Reference: Standard electronics: MOSFET square-law model

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