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Electronic Devices & CircuitsBJT Biasing

Thermal runaway in a BJT bias circuit is associated with a self-reinforcing rise in collector current caused by?

  • ATemperature-dependent device changes and increased power dissipation
  • BA decrease in temperature to absolute zero
  • CAn ideal current source with infinite compliance
  • DA disconnected power supply
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Correct Answer: A. Temperature-dependent device changes and increased power dissipation
Explanation: Higher junction temperature can increase leakage and alter VBE-related current, increasing dissipation and temperature further unless bias stabilization limits the process.
Reference: Standard transistor electronics: thermal runaway
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