Memory MCQs

Practice Memory MCQs with four options, answers and explanations for focused Electronics & Telecommunication Engineering revision.

Question 1
Digital ElectronicsMemory

EEPROM can be erased and reprogrammed?

  • AOnly by ultraviolet light
  • BElectrically
  • COnly by replacing the chip
  • DOnly while manufacturing
Report an error
Correct Answer: B. Electrically
Explanation: EEPROM stands for electrically erasable programmable read-only memory and can be erased and programmed electrically.
Reference: Standard digital electronics: EEPROM
Question 2
Digital ElectronicsMemory

Which memory is volatile?

  • AROM
  • BEEPROM
  • CRAM
  • DFlash memory
Report an error
Correct Answer: C. RAM
Explanation: RAM is volatile because its stored data is normally lost when power is removed.
Reference: Standard digital electronics: semiconductor memory
Question 4
Digital ElectronicsMemory

SRAM stores each bit using primarily?

  • AA capacitor that must be periodically refreshed
  • BA bistable latch/flip-flop-like cell
  • CA magnetic tape element
  • DAn optical sensor
Report an error
Correct Answer: B. A bistable latch/flip-flop-like cell
Explanation: SRAM uses bistable circuitry for each stored bit and does not require periodic refresh while powered.
Reference: Standard digital electronics: SRAM
Question 5
Digital ElectronicsMemory

DRAM requires periodic refresh mainly because each bit is stored as?

  • ACharge on a capacitor
  • BA permanent fuse state
  • CA mechanical switch position
  • DA magnetic core only
Report an error
Correct Answer: A. Charge on a capacitor
Explanation: DRAM cells store information as electrical charge on capacitors, and leakage requires periodic refreshing.
Reference: Standard digital electronics: DRAM
Question 10
Digital ElectronicsMemory

A 4K × 8 memory has a total capacity of?

  • A4 Kbits
  • B8 Kbits
  • C32 Kbits
  • D64 Kbits
Report an error
Correct Answer: C. 32 Kbits
Explanation: There are 4096 words of 8 bits each, giving 4096 × 8 = 32768 bits = 32 Kbits.
Reference: Standard digital electronics: memory capacity
Question 14
Digital ElectronicsMemory

Compared with DRAM, a typical SRAM cell is generally?

  • AFaster and does not require periodic refresh
  • BSlower and always requires refresh
  • CNonvolatile without power
  • DImplemented with one storage capacitor only
Report an error
Correct Answer: A. Faster and does not require periodic refresh
Explanation: SRAM uses bistable circuitry and normally offers faster access without refresh, although it uses more devices per bit and has lower density than DRAM.
Reference: Standard digital electronics: SRAM versus DRAM
Question 15
Digital ElectronicsMemory

Which nonvolatile memory can normally be electrically erased and rewritten at byte or small-unit granularity, unlike traditional UV-erasable EPROM?

  • AEEPROM
  • BSRAM
  • CDRAM
  • DRegister file only
Report an error
Correct Answer: A. EEPROM
Explanation: EEPROM is electrically erasable and programmable. Traditional EPROM requires ultraviolet light for erasure, while EEPROM supports electrical rewriting.
Reference: Standard digital electronics: EEPROM
Question 16
Digital ElectronicsMemory

Flash memory differs from conventional byte-erasable EEPROM mainly because flash is commonly erased in?

  • ABlocks or sectors
  • BSingle transistor terminals only
  • CClock cycles only
  • DAnalog voltage levels only
Report an error
Correct Answer: A. Blocks or sectors
Explanation: Flash memory is generally organized so erase operations affect blocks or sectors, enabling higher density than conventional byte-oriented EEPROM implementations.
Reference: Standard digital electronics: flash memory
Question 17
Digital ElectronicsMemory

A dual-port memory is especially useful when a design requires?

  • ATwo independent access ports to the same memory array
  • BOnly one fixed address forever
  • CNo read operation
  • DAnalog voltage storage only
Report an error
Correct Answer: A. Two independent access ports to the same memory array
Explanation: Dual-port memory provides two access interfaces, enabling two agents or datapaths to access a shared memory array with suitable arbitration or port rules.
Reference: Standard digital electronics: dual-port memory
Question 18
Digital ElectronicsMemory

A FIFO memory is best described by which ordering rule?

  • AFirst data written is the first data read
  • BLast data written is always the first data read
  • CData is read in random analog order
  • DOnly zero values can be stored
Report an error
Correct Answer: A. First data written is the first data read
Explanation: FIFO means First-In, First-Out: entries leave the buffer in the same order in which they entered.
Reference: Standard digital electronics: FIFO
Question 19
Digital ElectronicsMemory

Which pair of pointer conditions is commonly used in a FIFO to determine whether reads or writes should be blocked?

  • AEmpty and full
  • BCarry and borrow only
  • CSet and reset only
  • DGain and phase
Report an error
Correct Answer: A. Empty and full
Explanation: FIFO control logic tracks read and write positions and derives EMPTY and FULL conditions to prevent invalid reads and overwriting of unread data.
Reference: Standard digital electronics: FIFO status